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參數(shù)資料
| 型號(hào)： | AP9932GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.04 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 96K |
| 代理商： | AP9932GM |
Advanced Power
2N AND 2P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼
▼ Simple Drive Requirement
N-CH BVDSS
30V
▼
▼ Low On-resistance
RDS(ON)
40mΩ
▼
▼ Full Bridge Application on
ID
4.3A
LCD Monitor Inverter
P-CH
BVDSS
-30V
RDS(ON)
70mΩ
Description
ID
-3.3A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
± 12
V
ID@TA=25℃
Continuous Drain Current
3
4.3
-3.3
A
ID@TA=70℃
Continuous Drain Current
3
3.4
-2.6
A
IDM
Pulsed Drain Current
1
20
-20
A
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
90
℃/W
Data and specifications subject to change without notice
Parameter
200920041
AP9932GM
Thermal Data
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N1G
N1D/P1D
N1S/N2S
N2G
P1G
P1S/P2S
N2D/P2D
P2G
SO-8
N1G
N1S
P1G
P1S
P1N1D
N2G
N2S
P2G
P2S
P2N2D
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AP9934GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9938AGEY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Low On-resistance, Surface Mount Package |
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