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參數資料
| 型號： | AP9936GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 202K |
| 代理商： | AP9936GM |
AP9936GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
02
46
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Current
(A)
T A =150
o C
10V
8.0V
6.0V
4.0V
V GS =3.0V
0
10
20
30
40
50
0246
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Current
(A)
T A =25
o C
10V
8.0V
5.0V
4.0V
V GS =3.0V
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D =5A
V GS =10V
20
40
60
80
100
120
2468
10
12
V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =5A
T A =25 ℃
0.1
1
10
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S(A)
Tj=25
o C
Tj=150
o C
0.5
1
1.5
2
2.5
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS(
th)
(V)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP9936GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:DC-DC Application, Dual N-channel Device, Surface Mount Package |
| AP9936M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9938AGEY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Low On-resistance, Surface Mount Package |
| AP9938GEM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9938GEO-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application |
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