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參數資料
| 型號： | AP9974GS |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 72 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | LEAD FREE, TO-263, 3 PIN |
| 文件頁數： | 4/4頁 |
| 文件大小： | 76K |
| 代理商： | AP9974GS |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9974GS/P
Q
VG
4.5V
QGS
QGD
QG
Charge
100
1000
10000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
4
8
12
16
020
40
60
80
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eVoltage
(V)
V DS =48V
V DS =38V
V DS =30V
I D =35 A
0
25
50
75
100
125
02
468
V GS , Gate-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T j =150
o C
T j =25
o C
V DS =5V
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rm
a
liz
ed
Th
er
ma
lRes
p
o
n
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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相關代理商/技術參數 |
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|---|---|
| AP9975GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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