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參數資料
| 型號： | APT12045L2VFRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 28 A, 1200 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264MAX, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 129K |
| 代理商： | APT12045L2VFRG |
DYNAMIC CHARACTERISTICS
APT12045L2VFR
050-5844
Rev
A
4-2004
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 8.16mH, RG = 25, Peak IL = 28A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 IS ≤ ID [Cont.], di/dt = 100A/s, Tj ≤ 150°C, RG = 2.0 VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID 28A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID 28A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID 28A, di/dt = 100A/s)
Peak Recovery Current
(IS = -ID 28A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 600V
ID = 28A @ 25°C
VGS = 15V
VDD = 600V
ID = 28A @ 25°C
RG = 0.6
UNIT
pF
nC
ns
MIN
TYP
MAX
28
112
1.3
18
Tj = 25°C
310
Tj = 125°C
625
Tj = 25°C
2
Tj = 125°C
6
Tj = 25°C
14
Tj = 125°C
24
THERMALCHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.15
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
11370
950
495
605
42
310
16
15
85
14
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