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參數資料
| 型號： | APT13GP120B |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 407K |
| 代理商： | APT13GP120B |
050-7412
Rev
E
1-2006
APT13GP120B_S(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 500A)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 13A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 13A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
RBSOA
P
D
T
J,TSTG
T
L
APT13GP120B_S(G)
1200
±30
41
20
50
50A @ 960V
250
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Reverse Bias Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3.0
500
3000
±100
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 600V, 10A
Low Gate Charge
50 kHz operation @ 600V, 16A
Ultrafast Tail Current shutoff
RBSOA Rated
POWER MOS 7 IGBT
1200V
APT13GP120B
APT13GP120S
APT13GP120BG*
APT13GP120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
G
C
E
TO-2
47
G
C
E
D3PAK
G
C
E
B
S
相關PDF資料 |
PDF描述 |
|---|---|
| APT13GP120SG | 41 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
| APT13GP120BG | 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT13GP120BG | 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT13GP120S | 41 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
| APT13GP120S | 41 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT13GP120BD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family |
| APT13GP120BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT13GP120BDQ1G | 功能描述:IGBT 1200V 41A 250W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT13GP120BG | 功能描述:IGBT 1200V 41A 250W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT13GP120K | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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