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參數(shù)資料
| 型號(hào)： | APT13GP120KG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 41 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 156K |
| 代理商： | APT13GP120KG |
050-7415
Rev
B
2-2004
APT13GP120K
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
IC
VCLAMP
100uH
VTEST
A
B
D.U.T.
DRIVER*
VCE
Figure 24, EON1 Test Circuit
Emitter
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
16.51 (.650)
14.23 (.560)
6.35 (.250)
MAX.
Gate
Collector
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Collector
TO-220AC Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
IC
A
D.U.T.
APT15DF120
VCE
Figure 21, Inductive Switching Test Circuit
VCC
90%
10%
t
r
5%
T
J = 125°C
Drain Current
DrainVoltage
Gate Voltage
10%
t
d(on)
Switching Energy
90%
t
d(off)
0
10%
t
f
T
J = 125°C
DrainVoltage
Drain Current
Gate Voltage
Switching Energy
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PDF描述 |
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| APT13GP120K | 41 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
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| APT15GN120BDQ1G | 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT15GN120BDQ1 | 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT13GP120S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT13GP120SG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT14050JVFR | 功能描述:MOSFET N-CH 1400V 23A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT14F100B | 功能描述:MOSFET N-CH 1000V 14A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT14F100B_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel FREDFET |
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