- 您現在的位置：買賣IC網 > PDF目錄366565 > APT15GP90B (Advanced Power Technology Ltd.) The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. PDF資料下載
參數資料
| 型號： | APT15GP90B |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. |
| 中文描述： | 功率MOS 7 IGBT的是一個高壓電源IGBT的新一代。 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 165K |
| 代理商： | APT15GP90B |
0
TYPICAL PERFORMANCE CURVES
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
Low Gate Charge
Ultrafast Tail Current shutoff
100 kHz operation @ 600V, 9A
50 kHz operation @ 600V, 17A
SSOA Rated
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
APT15GP90B
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
900
3
4.5
6
3.2
3.9
2.7
250
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250μA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
μA
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
900
±20
±30
43
21
60
60A @ 900V
291
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
GCE
G
C
E
POWER MOS 7
IGBT
APT15GP90B
900V
相關PDF資料 |
PDF描述 |
|---|---|
| APT15GT60BR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15GT60BRD | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15GT60KR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT15S20KCT | HIGH VOLTAGE SCHOTTKY DIODE |
| APT200GN60J | Intergrated Gate Resistor: Low EMI, High Reliability |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT15GP90B_06 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs |
| APT15GP90BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT15GP90BDQ1G | 功能描述:IGBT 900V 43A 250W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT15GP90BG | 功能描述:IGBT 900V 43A 250W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT15GP90K | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
發布緊急采購，3分鐘左右您將得到回復。