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參數資料
| 型號： | APT20GN60SDQ2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 237K |
| 代理商： | APT20GN60SDQ2 |
050-7636
Rev
A
1-201
1
APT20GN60B_SDQ2(G)
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 2mA)
Gate Threshold Voltage (V
CE = VGE, I C = 290μA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 20A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 20A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
μA
nA
Ω
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT20GN60B_SDQ2(G)
600
±30
40
24
60
60A @ 600V
136
-55 to 175
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 175°C
Switching Safe Operating Area @ T
J = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefcient. Low gate charge simplies gate drive
design and minimizes losses.
600V Field Stop
Trench Gate: Low VCE(on)
Easy Paralleling
6μs Short Circuit Capability
175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
600
5.0
5.8
6.5
1.1
1.5
1.9
1.7
50
TBD
300
N/A
APT20GN60BDQ2 APT20GN60SDQ2
APT20GN60BDQ2(G) APT20GN60SDQ2(G)
600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
TO
-24
7
G
C
E
D3PAK
G
C
E
(S)
(B)
Microsemi Website - http://www.microsemi.com
C
E
G
相關PDF資料 |
PDF描述 |
|---|---|
| APT20GN60BDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60BDQ2 | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60SDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT |
| APT20GS60BRDQ1 | 37 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GS60SRDQ1 | 37 A, 600 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT20GN60SG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60BRDQ1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GS60BRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
| APT20GS60KR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube |
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