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參數資料
| 型號： | APT20GT60KR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 43 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 392K |
| 代理商： | APT20GT60KR |
052-6203
Rev
D
12-2005
APT20GT60KR(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
,THRESHOLD
VOLTAGE
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
1
2
3
4
5
6
0
5
10
15
20
0
2
4
6
8
10
12
0
20
40
60
80
100
120
6
8
10
12
14
16
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
15V
9V
8V
7V
10V
6V
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 40A
I
C = 20A
I
C = 10A
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 40A
I
C = 20A
I
C = 10A
T
J = 125°C
T
J = 25°C
T
J = -55°C
13V
11V
V
CE = 480V
V
CE = 300V
V
CE = 120V
IC = 20A
TJ = 25°C
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相關代理商/技術參數 |
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|---|---|
| APT20GT60KRG | 功能描述:IGBT 600V 43A 174W TO220 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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| APT20M10JLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT20M11JFLL | 功能描述:MOSFET N-CH 200V 176A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT20M11JLL | 功能描述:MOSFET N-CH 200V 176A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
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