- 您現在的位置：買賣IC網 > PDF目錄51263 > APT20M11JFLL 176 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | APT20M11JFLL |
| 元件分類： | JFETs |
| 英文描述： | 176 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 171K |
| 代理商： | APT20M11JFLL |
050-7042
Rev
C
9-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
APT20M11JFLL
200V 176A 0.011
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
SOT-227
G
S
D
ISOTOP
"UL Recognized"
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular SOT-227 Package
FAST RECOVERY BODY DIODE
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7 R FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 88A)
Zero Gate Voltage Drain Current (V
DS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 160V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
200
0.011
250
1000
±100
35
APT20M11JFLL
200
176
704
±30
±40
694
5.56
-55 to 150
300
176
50
3600
相關PDF資料 |
PDF描述 |
|---|---|
| APT20M120JCU3 | 20 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M16B2FLL | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M16LFLLG | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT20M16LFLL | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT20M16B2FLLG | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT20M11JLL | 功能描述:MOSFET N-CH 200V 176A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT20M11JVFR | 功能描述:MOSFET N-CH 200V 175A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT20M11JVR | 功能描述:MOSFET N-CH 200V 175A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT20M120JCU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET DIODE 1200V SOT227 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT20M120JCU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET DIODE 1200V SOT227 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
發布緊急采購，3分鐘左右您將得到回復。