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參數資料
| 型號： | APT20M120JCU2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 109K |
| 代理商： | APT20M120JCU2 |
APT20M120JCU2
APT
20M
120JCU2
–
Rev
0
September
,2009
www.microsemi.com
1- 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G
S
D
K
ISOTOP
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
20
ID
Continuous Drain Current
Tc = 80°C
15
IDM
Pulsed Drain current
104
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
672
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
543
W
IAR
Avalanche current (repetitive and non repetitive)
14
A
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS 8 MOSFET
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP
Boost chopper
MOSFET + SiC chopper diode
Power module
K
D
G
S
VDSS = 1200V
RDSon = 560mΩ typ @ Tj = 25°C
ID = 20A @ Tc = 25°C
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