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參數資料
| 型號： | APT25GN120B2DQ2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 67 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | T-MAX, 3 PIN |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 220K |
| 代理商： | APT25GN120B2DQ2 |
050-7603
Rev
B
10-2005
APT25GN120B2DQ2(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 150A)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
GINT
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT25GN120B2DQ2(G)
1200
±30
67
33
75
75A @ 1200V
272
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 150°C
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior VCE(on) performance. Easy paralleling results from very tight
parameter distribution and slightly positive VCE(on) temperature coefcient. Built-in
gate resistance ensures ultra-reliable operation. Low gate charge simplies gate drive
design and minimizes losses.
1200V NPT Field Stop
Trench Gate: Low VCE(on)
Easy Paralleling
10s Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
1200
5
5.8
6.5
1.4
1.7
2.1
1.9
200
TBD
600
8
1200V
APT25GN120B2DQ2
APT25GN120B2DQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
E
G
(B2)
T-Max
相關PDF資料 |
PDF描述 |
|---|---|
| APT25GN120B2DQ2 | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GN120BG | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GN120S | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120SG | 67 A, 1200 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT25GN120B2DQ2G | 功能描述:IGBT 1200V 67A 272W TMAX RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT25GN120BG | 功能描述:IGBT 1200V 67A 272W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT25GN120S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Utilizing the latest Field Stop and Trench Gate technologies |
| APT25GN120SG | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 67A 272W D3PAK 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single |
| APT25GP120B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family |
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