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參數(shù)資料
| 型號(hào)： | APT25GP120BDQ1G |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 209K |
| 代理商： | APT25GP120BDQ1G |
050-7457
Rev
A
6-2005
APT25GP120BDQ1(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 350A)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
RBSOA
P
D
T
J,TSTG
T
L
APT25GP120BDQ1(G)
1200
±30
69
33
90
90A @ 960V
417
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 150°C
Reverse Bias Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3.0
350
3000
±100
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 800V, 11A
Low Gate Charge
50 kHz operation @ 800V, 19A
Ultrafast Tail Current shutoff
RBSOA Rated
POWER MOS 7 IGBT
1200V
APT25GP120BDQ1
APT25GP120BDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
E
G
TO-2
47
G
C
E
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PDF描述 |
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| APT25GP120BDQ1G | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GP120BDQ1 | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GT120BRDQ2 | 54 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GT120BRDQ2G | 54 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT25GT120BRG | 54 A, 1200 V, N-CHANNEL IGBT, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT25GP120BG | 功能描述:IGBT 1200V 69A 417W TO247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT25GP90B | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP90BDF1 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP90BDQ1 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP90BDQ1G | 功能描述:IGBT 900V 72A 417W TO247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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