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參數資料
| 型號： | APT25GP120BG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 69 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 4/6頁 |
| 文件大小： | 95K |
| 代理商： | APT25GP120BG |
050-7411
Rev
B
4-2003
APT25GP120B
T
J
= 125°C, VGE = 10V or 15V
VCE = 600V
RG = 5
L = 100 H
VGE= 15V
VGE= 10V
V
GE
=15V,TJ=125°C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
10
20
30
40
50
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
0
25
50
75
100
125
V
GE
=10V,TJ=125°C
V
GE
=15V,TJ=25°C
V
GE
=10V,TJ=25°C
T
J
= 25° or 125°C,VGE = 10V
T
J
= 25°C, VGE = 10V or 15V
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
3500
3000
2500
2000
1500
1000
500
0
T
J
= 25° or 125°C,VGE =15V
T
J
= 125°C, VGE = 10V or 15V
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
Eon2,50A
Eoff,50A
Eon2,25A
Eoff, 25A
Eon2,12.5A
Eoff,12.5A
T
J
= 125°C,VGE =10V
T
J
= 125°C,VGE =15V
T
J
= 25°C,VGE =10V
T
J
= 25°C, VGE = 10V or 15V
T
J
= 25°C,VGE =15V
25
20
15
10
5
0
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
4500
4000
3500
3000
2500
2000
1500
1000
500
0
V
CE = 600V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
R
G
= 5
, L = 100H, V
CE = 600V
R
G
= 5
, L = 100H, V
CE = 600V
Eon2, 50A
Eoff, 50A
Eon2, 25A
Eoff, 25A
Eon2, 12.5A
Eoff, 12.5A
VCE = 600V
VGE = +15V
RG = 5
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT25GP90B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP90BDF1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP90BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP90BDQ1G | 功能描述:IGBT 900V 72A 417W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT25GP90BG | 功能描述:IGBT 900V 72A 417W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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