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參數資料
| 型號： | APT25GP90BDQ1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 72 A, 900 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件頁數： | 4/9頁 |
| 文件大小： | 442K |
| 代理商： | APT25GP90BDQ1G |
050-7476
Rev
A
11-2005
APT25GP90BDQ1(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 600V
R
G = 4.3
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
VCE = 600V
VGE = +15V
RG = 4.3
R
G = 4.3, L = 100H, VCE = 600V
V
CE = 600V
T
J = 25°C, or 125°C
R
G = 4.3
L = 100H
18
16
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10
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4
2
0
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0
3000
2500
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20
0
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2000
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1000
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0
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1000
500
0
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C
T
J = 25°C
VCE = 600V
VGE = +15V
RG = 4.3
T
J = 125°C
T
J = 25°C
VCE = 600V
VGE = +15V
RG = 4.3
VCE = 600V
VGE = +15V
TJ = 125°C
10
20
30
40
50
60
10
20
30
40
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60
10
20
30
40
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10
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20
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60
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 4.3, L = 100H, VCE = 600V
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
E
on2,12.5A
E
off,12.5A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
E
on2,12.5A
E
off,12.5A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT25GP90BG | 功能描述:IGBT 900V 72A 417W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT25GR120B | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT25GR120BD15 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 75A 521W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT25GR120BSCD10 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 75A 521W TO247 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE TRANSISTOR 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE POWER TRANSISTORS/MODULES |
| APT25GR120S | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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