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參數資料
| 型號： | APT26GU30SA |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 47 A, 300 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263, D2PAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 172K |
| 代理商： | APT26GU30SA |
050-7466
Rev
B
4-2004
APT26GU30K_SA
TYPICAL PERFORMANCE CURVES
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
SSOA rated
Low Gate Charge
Ultrafast Tail Current shutoff
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
300
3
4.5
6
1.5
2.0
1.5
250
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250A)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT26GU30K_SA
300
±20
±30
47
26
85
85A @ 300V
187
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
G
C
E
POWER MOS 7 IGBT
TO-220
G C
E
APT26GU30K
APT26GU30SA
300V
D2PAK
G
C
E
相關PDF資料 |
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|---|---|
| APT26GU30K | 47 A, 300 V, N-CHANNEL IGBT, TO-220AB |
| APT26GU30SA | 47 A, 300 V, N-CHANNEL IGBT, TO-263AB |
| APT26GU30SAG | 47 A, 300 V, N-CHANNEL IGBT, TO-263AB |
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| APT26M100JCU3 | 制造商:Microsemi Corporation 功能描述:MOD MOSFET DIODE 1000V SOT227 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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| APT27GA90BD15 | 功能描述:IGBT 900V 48A 223W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT27GA90K | 功能描述:IGBT 900V 48A 223W TO-220 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 8™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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