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參數資料
| 型號： | APT30GF60JU2 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 58 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 476K |
| 代理商： | APT30GF60JU2 |
APT30GF60JU2
A
PT
30G
F60J
U
2–
R
ev
0
A
pr
il
,2004
APT website – http://www.advancedpower.com
1 – 8
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
IC1
TC = 25°C
58
IC2
Continuous Collector Current
TC = 100°C
30
ICM
Pulsed Collector Current
TC = 25°C
110
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
192
W
ILM
RBSOA clamped Inductive load Current RG=11
TC = 25°C
60
A
IFAV
Maximum Average Forward Current
Duty cycle=0.5
TC = 80°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
39
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
K
E
C
G
VCES = 600V
IC = 30A @ Tc = 100°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
ISOTOP Boost chopper
NPT IGBT
K
C
G
E
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| APT30GN60BDQ2 | 63 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT30GN60BDQ2G | 63 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT30GP60BDF1 | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT30GP60BSC | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT30GF60JU3 | 功能描述:IGBT 600V 58A 192W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT30GL100BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 30A I(C) | TO-247 |
| APT30GN60B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT30GN60BDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT30GN60BDQ2G | 功能描述:IGBT 600V 63A 203W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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