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參數資料
| 型號： | APT30GP60JDF1 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 67 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 212K |
| 代理商： | APT30GP60JDF1 |
050-7420
Rev
C
8-2004
TYPICAL PERFORMANCE CURVES
APT30GP60JDF1
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for very
fast switching, making it ideal for high frequency, high voltage switch-mode
power supplies and tail current sensitive applications. In many cases, the
POWER MOS 7 IGBT provides a lower cost alternative to a Power MOSFET.
Low Conduction Loss
100 kHz operation @ 400V, 23A
Low Gate Charge
200 kHz operation @ 400V, 15A
Ultrafast Tail Current shutoff
SSOA rated
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
500
3000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500A)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT30GP60JDF1
600
±20
±30
67
31
120
120A @ 600V
245
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
POWER MOS 7 IGBT
G
C
E
SOT-227
G
E
C
ISOTOP
"UL Recognized"
APT30GP60JDF1
600V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT30GP60JDQ1 | 功能描述:IGBT 600V 67A 245W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:POWER MOS 7® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT30GP60LDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GP60LDLG | 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264 |
| APT30GS60BRDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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