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參數資料
| 型號： | APT40GP90J |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 68 A, 900 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 4/6頁 |
| 文件大小： | 175K |
| 代理商： | APT40GP90J |
050-7481
Rev
A
5-2004
APT40GP90J
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =15V
VCE = 600V
RG = 5
L = 100 H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
VCE = 600V
VGE = +15V
TJ = 125°C
R
G = 5, L = 100
H, VCE = 600V
R
G = 5, L = 100
H, VCE = 600V
VCE=600V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
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125
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
120
100
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20
0
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120
100
80
60
40
20
0
3500
3000
2500
2000
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1000
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0
6000
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0
Eon2, 80A
Eoff, 80A
Eon2, 40A
Eoff, 40A
Eon2, 20A
Eoff, 20A
25
20
15
10
5
0
70
60
50
40
30
20
10
0
6000
5000
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1000
0
8000
7000
6000
5000
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0
Eon2,80A
Eoff, 40A
Eon2,40A
Eoff,80A
Eon2,20A
Eoff,20A
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| APT40GR120B2D30 | 功能描述:IGBT 1200V 88A 500W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT40GR120B2SCD10 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 88A 500W TO247 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE POWER TRANSISTORS/MODULES |
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