- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄64116 > APT50GP90B 100 A, 900 V, N-CHANNEL IGBT, TO-247AD PDF資料下載
參數(shù)資料
| 型號(hào)： | APT50GP90B |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 100 A, 900 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 29K |
| 代理商： | APT50GP90B |
050-7483
Rev
-
1-2003
ADVANCE
TECHNICAL
INFORMATION
APT50GP90B
900V
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
RBSOA rated
Low Gate Charge
Ultrafast Tail Current shutoff
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
900
3
4.5
6
3.2
3.9
2.7
500
1000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500A)
Gate Threshold Voltage
(VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
RBSOA
PD
TJ,TSTG
TL
APT50GP90B
900
±20
±30
100
58
190
190A @ 720V
625
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current 4 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
@ TC = 25°C
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
POWER MOS 7
IGBT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT60GF60JU2 | 93 A, 600 V, N-CHANNEL IGBT |
| APT75GN120J | 124 A, 1200 V, N-CHANNEL IGBT |
| APT77H60J | 77 A, 600 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8014L2FLL | 52 A, 800 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT94N65B2C3 | 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120JD30 | 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120L | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GS60BR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT50GS60BRDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。