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參數資料
| 型號： | APT50GS60BRDL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 257K |
| 代理商： | APT50GS60BRDL |
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Single die
IGBT with
separate DL
Symbol
Parameter
Min
Typ
Max
Unit
PD
Total Power Dissipation TC = @ 25°C
-
415
W
RθJC
Junction to Case Thermal Resistance
IGBT
-
0.30
°C/W
Diode
0.63
RθCS
Case to Sink Thermal Resistance, Flat Greased Surface
-
0.11
-
TJ, TSTG Operating and Storage Junction Temperature Range
-55
-
150
°C
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
-
300
WT
Package Weight
-
0.22
-
oz
-
5.9
-
g
Torque
Mounting Torque (TO-247), 6-32 M3 Screw
-
10
inlbf
-
1.1
Nm
Symbol
Parameter
Rating
Unit
I
C1
Continuous Collector Current TC = @ 25°C
93
A
I
C2
Continuous Collector Current TC = @ 100°C
50
I
CM
Pulsed Collector Current 1
195
V
GE
Gate-Emitter Voltage
±30V
V
SSOA
Switching Safe Operating Area
195
t
SC
Short Circut Withstand Time 3
10
μs
Typical Applications
ZVS Phase Shifted Bridge
Resonant Mode Switching
Phase Shifted Bridge
Welding
Induction heating
High Frequency SMPS
Features
Fast Switching with low EMI
Very Low E
OFF for Maximum Efciency
Short circuit rated
Low Gate Charge
RoHS Compliant
Tight parameter distribution
Easy paralleling
Low Forward Diode Voltage (VF)
Ultrasoft Recovery Diode
The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through
(NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for signicantly lower
turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz,
approaching power MOSFET performance but lower cost.
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefcient make it
easy to parallel Thunderbolts HS IGBT's. Controlled slew rates result in very good noise and oscillation
immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor
drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi
versions are packaged with a high speed, soft recovery DL series diode.
G
C
E
Resonant Mode Combi IGBT
G
C
E
TO-247
APT50GS60BRDL(G)
600V, 50A, VCE(ON) = 2.8V Typical
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Microsemi Website - http://www.microsemi.com
052-6352
Rev
A
7-2008
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
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| APT50GT60BRDQ1G | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GT60BRDQ1G | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GT60BRDQ1 | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GT60BRDQ2 | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50M60JVR | 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT50GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GS60BRDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT50GS60BRDQ2G | 功能描述:IGBT 600V 93A 415W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT50GS60BRG | 功能描述:IGBT 600V 93A 415W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT50GS60SR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
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