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參數資料
| 型號： | APT50GT60BRDQ2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 4/9頁 |
| 文件大小： | 256K |
| 代理商： | APT50GT60BRDQ2 |
052-6272
Re
v
C
6-2008
APT50GT60BRDQ2(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 5
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE9,Turn-OnDelayTimevsCollectorCurrent
FIGURE10,Turn-OffDelayTimevsCollectorCurrent
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE11,CurrentRiseTimevsCollectorCurrent
FIGURE12,CurrentFallTimevsCollectorCurrent
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE13,Turn-OnEnergyLossvsCollectorCurrent
FIGURE14,TurnOffEnergyLossvsCollectorCurrent
R
G, GATE RESISTANCE (OHMS)
T
J,JUNCTIONTEMPERATURE(°C)
FIGURE15,SwitchingEnergyLossesvs.GateResistance
FIGURE16,SwitchingEnergyLossesvsJunctionTemperature
V
CE = 400V
V
GE = +15V
R
G = 5
V
CE = 400V
T
J = 25°C, or 125°C
R
G = 5
L = 100H
25
20
15
10
5
0
90
80
70
60
50
40
30
20
10
0
5000
4000
3000
2000
1000
0
10,000
8,000
6,000
4,000
2,000
0
350
300
250
200
150
50
0
180
160
140
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
5,000
4,000
3,000
2,000
1,000
0
V
GE = 15V
V
CE = 400V
V
GE = +15V
R
G = 5
0
20
40
60
80
100
120
0
20
40
60
80
100
125
0
20
40
60
80
100
120
0
20
40
60
80
100
120
0
20
40
60
80
100
120
0
20
40
60
80
100
120
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 5, L = 100
H, V
CE = 400V
T
J = 125°C
T
J = 25°C
R
G = 5, L = 100
H, V
CE = 400V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
V
CE = 400V
V
GE = +15V
T
J = 125°C
V
CE = 400V
V
GE = +15V
R
G = 5
T
J = 125°C
T
J = 25°C
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT50GT60BRDQ2G | 功能描述:IGBT 600V 110A 446W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT50GT60BRG | 功能描述:IGBT 600V 110A 446W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT50GT60SR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60SRG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50M38JFLL | 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
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