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參數資料
| 型號： | APT50M80B2VFRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 96K |
| 代理商： | APT50M80B2VFRG |
DYNAMIC CHARACTERISTICS
APT50M80B2VFR_LVFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -58A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -58A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -58A, di/dt = 100A/s)
Peak Recovery Current
(IS = -58A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 250V
ID = 58A @ 25°C
VGS = 15V
VDD = 250V
ID = 58A @ 25°C
RG = 0.6
MIN
TYP
MAX
8797
1286
562
423
41
214
14
25
64
23
UNIT
pF
nC
ns
MIN
TYP
MAX
58
232
1.3
5
Tj = 25°C
270
Tj = 125°C
540
Tj = 25°C
2.7
Tj = 125°C
5.9
Tj = 25°C
16
Tj = 125°C
22.5
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.20
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
050-5912
Rev
B
12-2003
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 1.78mH, RG = 25, Peak IL = 58A
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
5dv/
dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-58A di/dt ≤ 700A/s V
R ≤
500V
T
J ≤
150
°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT50M80B2VR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 58A 3-Pin(3+Tab) T-MAX |
| APT50M80B2VR_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V |
| APT50M80B2VRG | 功能描述:MOSFET N-CH 500V 58A T-MAX RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT50M80JLC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M80LLC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
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