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參數(shù)資料
型號: APT50M80B2VFRG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-247, 3 PIN
文件頁數(shù): 4/4頁
文件大小: 96K
代理商: APT50M80B2VFRG
050-5912
Rev
B
12-2003
APT50M80B2VFR_LVFR
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAX(B2) Package Outline
TO-264 (L) Package Outline
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
10
100
500
0
10
20
30
40
50
0
100
200
300
400
500
600
700
0.3
0.5
0.7
0.9
1.1
1.3
1.5
232
100
10
1
16
12
8
4
0
30,000
10,000
1,000
100
200
100
10
1
Crss
Coss
Ciss
VDS=250V
VDS=100V
VDS=400V
I
D
= 58A
TJ =+150°C
TJ =+25°C
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100S
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相關(guān)PDF資料
PDF描述
APT50M80LVFR 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M80B2VFR 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT50M80LVFR 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M80LVFRG 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
APT5510JFLL 44 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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APT50M80B2VRG 功能描述:MOSFET N-CH 500V 58A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT50M80JLC 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
APT50M80LLC 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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