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參數資料
| 型號： | APT53N60SC6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 53 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 149K |
| 代理商： | APT53N60SC6 |
MAXIMUM RATINGS
All Ratings per die: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
STATIC ELECTRICAL CHARACTERISTICS
Ultra Low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Qg
Avalanche Energy Rated
Extreme dv/dt Rated
Popular TO-247 or Surface Mount D
3 package.
Super Junction MOSFET
C
Power Semiconductors
O
O LMOS
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
G
D
S
Microsemi Website - http://www.microsemi.com
APT53N60BC6
APT53N60SC6
600V
53A 0.070
Ω
Symbol
Parameter
APT53N60B_SC6
UNIT
V
DSS
Drain-Source Voltage
600
Volts
I
D
Continuous Drain Current @ T
C = 25°C
53
Amps
Continuous Drain Current @ T
C = 100°C
34
I
DM
Pulsed Drain Current 1
159
V
GS
Gate-Source Voltage Continuous
±
20
Volts
P
D
Total Power Dissipation @ T
C = 25°C
417
Watts
T
J,TSTG
Operating and Storage Junction Temperature Range
- 55 to 150
°C
T
L
Lead Temperature: 0.063" from Case for 10 Sec.
260
I
AR
Avalanche Current 2
9.3
Amps
E
AR
Repetitive Avalanche Energy 2 ( Id =9.3A, Vdd = 50V )
1.72
mJ
E
AS
Single Pulse Avalanche Energy
( Id = 9.3A, Vdd = 50V )
1135
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BV
(DSS)
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250μA)
600
Volts
R
DS(on)
Drain-Source On-State Resistance 3 (V
GS = 10V, ID = 25.8A)
0.070
Ohms
I
DSS
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
25
μA
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
250
I
GSS
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
±100
nA
V
GS(th)
Gate Threshold Voltage (V
DS = VGS, ID = 1.72mA)
2.5
3
3.5
Volts
TO-247
D3PAK
050-7206
Rev
B
8-2010
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT54GA60B | 功能描述:IGBT 600V 96A 416W TO-247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 8™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT54GA60BD30 | 功能描述:IGBT 600V 96A 416W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT54GA60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT54GA60SD30 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT55-101DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17.5A I(D) | CHIP |
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