欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): APT609RKVR
元件分類: JFETs
英文描述: 1 A, 600 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 31K
代理商: APT609RKVR
ADVANCE
TECHNICAL
INFORMATION
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
On State Drain Current 2 (V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance 2 (V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
050-7253
Rev
-
2-2002
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
600
1
9.0
25
250
±100
24
APT609RKVR
600
1
4
±30
±40
31
.25
-55 to 150
300
1
15
55
APT609RKVR
600V
1A
9.0
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
100% Avalanche Tested
Lower Leakage
Popular TO-220 Package
POWER MOS V
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
TO-220
相關(guān)PDF資料
PDF描述
APT60GL120JU2 80 A, 1200 V, N-CHANNEL IGBT
APT60GL120JU3 80 A, 1200 V, N-CHANNEL IGBT
APT60GT60JRD 93 A, 600 V, N-CHANNEL IGBT
APT60GT60JR 93 A, 600 V, N-CHANNEL IGBT
APT60GT60SR 100 A, 600 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT60D100B 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
APT60D100B_05 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
APT60D100BG 功能描述:DIODE ULT FAST 60A 1000V TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)(最大):50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)(最大):1.4V @ 6A 速度:快速恢復(fù) = 200mA(Io) 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座,接線柱安裝 封裝/外殼:DO-203AA,DO-4,接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879
APT60D100LCT 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODES
APT60D100LCT_05 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
主站蜘蛛池模板: 石首市| 怀化市| 鹿邑县| 巩义市| 井冈山市| 东阳市| 禹州市| 铅山县| 杭州市| 子洲县| 永川市| 陈巴尔虎旗| 苍溪县| 藁城市| 涟源市| 西昌市| 巨鹿县| 齐河县| 镇沅| 南靖县| 礼泉县| 通榆县| 泸定县| 独山县| 丰台区| 和林格尔县| 安阳市| 夏邑县| 安化县| 滨州市| 扶余县| 赞皇县| 治多县| 鹤山市| 博爱县| 德令哈市| 雷波县| 乾安县| 昆明市| 山阴县| 兴仁县|