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參數(shù)資料
| 型號： | APT60GF60JRDQ3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 149 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 446K |
| 代理商： | APT60GF60JRDQ3 |
052-6287
Rev
A
4-2006
APT60GF120JRDQ3
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 350A)
Gate Threshold Voltage (V
CE = VGE, I C = 500A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 100A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 100A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
mA
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
APT60GF120JRDQ3
1200
±30
149
79
300
300A @ 1200V
625
-55 to 150
UNIT
Volts
Amps
Watts
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.5
3.0
3.1
0.35
3.0
±100
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
RBSOA and SCSOA Rated
Ultra Low Leakage Current
Ultrafast Soft Recovery Anti-parallel Diode
FAST IGBT & FRED
SO
T-2
27
ISOTOP
file # E145592
"UL Recognized"
G
E
C
C
E
G
1200V
APT60GF120JRDQ3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60GF60JU2 | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT60GF60JU3 | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT60GL120JU2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP? Boost chopper Trench + Field Stop IGBT4 Power module |
| APT60GL120JU2_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP?? Boost chopper Trench Field Stop IGBT4 Power module |
| APT60GL120JU3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP Buck chopper Trench + Field Stop IGBT4 Power module |
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