- 您現在的位置：買賣IC網 > PDF目錄36724 > APT60M90JN 57 A, 600 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | APT60M90JN |
| 元件分類： | JFETs |
| 英文描述： | 57 A, 600 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 60K |
| 代理商： | APT60M90JN |
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
APT60M90JN
600V 57A 0.090
SINGLE DIE ISOTOP PACKAGE
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1 and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
A)
On State Drain Current 2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°C)
Gate-Source Leakage Current (V
GS
=
±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 5.0mA)
THERMAL CHARACTERISTICS
Symbol
RΘJC
RΘCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP
MAX
0.18
0.05
UNIT
°C/W
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
MIN
TYP
MAX
APT60M90JN
600
APT60M90JN
57
APT60M90JN
0.090
250
1000
±100
24
UNIT
Volts
Amps
Ohms
A
nA
Volts
UNIT
Volts
Amps
Volts
Watts
W/
°C
APT
60M90JN
600
57
228
±30
690
5.52
-55 to 150
300
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
SOT-227
G
S
D
ISOTOP
"UL Recognized" File No. E145592 (S)
050-6038
Rev
F
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| APT60N60BCS | 60 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT60N60SCSG | 60 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60N60SCS | 60 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60N90JC3G | 60 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT63H60B2 | 63 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT60N60BCS | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT60N60BCSG | 功能描述:MOSFET N-CH 600V 60A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT60N60SCS | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT60N60SCSG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 60A 3-Pin(2+Tab) D3PAK 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N60SCSG/TR | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
發布緊急采購，3分鐘左右您將得到回復。