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參數資料
| 型號： | APT60N90JC3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP, 4 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 0K |
| 代理商： | APT60N90JC3G |
900V
60A
APT60N90JC3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS
All Ratings per die: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 500μA)
Drain-Source On-State Resistance 3 (V
GS = 10V, ID = 30A)
Zero Gate Voltage Drain Current (V
DS = 900V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 900V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 5.8mA)
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ T
C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 400V, ID = 36A, TJ = 125°C)
Avalanche Current 2
Repetitive Avalanche Energy 2
( Id = 8.8A, Vdd = 50V )
Single Pulse Avalanche Energy
( Id = 8.8A, Vdd = 50V )
UNIT
Volts
Amps
Volts
Watts
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
(DSS)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
μA
nA
Volts
APT60N90JC3G
900
60
38
156
±20
390
-55 to 150
300
50
8.8
2.9
1940
Ultra Low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Qg
Avalanche Energy Rated
Extreme dv/dt Rated
Dual die (parallel)
Popular T-MAX Package
Super Junction MOSFET
MIN
TYP
MAX
900
0.05
0.06
-
20
-
100
-
200
2.5
3
3.5
C
Power Semiconductors
O
O LMOS
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trademark of Inneon
Technologies AG."
G
D
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Microsemi Website - http://www.microsemi.com
050-7242
Rev
A
9-2009
SO
T-2
27
ISOTOP
file # E145592
"UL Recognized"
G
S
D
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