- 您現在的位置：買賣IC網 > PDF目錄48371 > APT8030B2VFRG (MICROSEMI POWER PRODUCTS GROUP) 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD PDF資料下載
參數資料
| 型號： | APT8030B2VFRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | CLIP MOUNTED TO-247, TMAX-3 |
| 文件頁數： | 4/4頁 |
| 文件大小： | 62K |
| 代理商： | APT8030B2VFRG |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50 100
800
.01
.1
1
10
50
0
100
200
300
400
500
600
0
0.4
0.8
1.2
1.6
2.0
APT8030B2VFR
TC =+25°C
TJ =+150°C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
30,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
VDS=250V
VDS=100V
VDS=400V
I
D
= I
D
[Cont.]
10S
1mS
10mS
100mS
DC
100S
T-MAX Package Outline 5
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2-Plcs.
050-5623
Rev
A
1-2005
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相關PDF資料 |
PDF描述 |
|---|---|
| APT8030B2VFR | 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT8030CFN | 29 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5085CN | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| APT6017AFN | 39 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R3AN | 8.5 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT8030B2VR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8030B2VRG | 功能描述:MOSFET N-CH 800V 27A T-MAX RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT8030CFN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 29A I(D) |
| APT8030DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | CHIP |
| APT8030FN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 29A I(D) | F-PACK SIP |
發布緊急采購，3分鐘左右您將得到回復。