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參數資料
| 型號： | APTC60DAM24T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 4/6頁 |
| 文件大小： | 306K |
| 代理商： | APTC60DAM24T1G |
APTC60DAM24T1G
APT
C
60DA
M
24T
1G
–R
ev
0
A
ugu
st
,20
07
www.microsemi.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
erm
al
I
m
ped
ance
(
°C/
W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
80
160
240
320
400
480
560
640
720
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rr
ent
(A)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=25°C
TJ=125°C
0
40
80
120
160
200
240
280
01
23
4
5
67
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cur
ren
t(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
0
40
80
120 160 200 240 280
ID, Drain Current (A)
R
DS
(o
n)
Dr
ai
n
t
o
So
u
rce
ON
Resi
st
an
ce
Normalized to
VGS=10V @ 95A
0
20
40
60
80
100
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Drai
n
Cu
rr
en
t(A
)
DC Drain Current vs Case Temperature
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相關代理商/技術參數 |
參數描述 |
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