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參數資料
| 型號： | APTC60DAM24T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 5/6頁 |
| 文件大小： | 306K |
| 代理商： | APTC60DAM24T1G |
APTC60DAM24T1G
APT
C
60DA
M
24T
1G
–R
ev
0
A
ugu
st
,20
07
www.microsemi.com
5 – 6
0.8
0.9
1.0
1.1
1.2
25
50
75
100
125
150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S,
Dr
ai
n
to
S
o
u
rce
Br
ea
kd
own
Vo
lt
ag
e(
N
or
ma
li
ze
d)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
(on
),
Drai
n
to
So
ur
ce
ON
r
esi
st
an
ce
(N
or
m
al
ize
d)
VGS=10V
ID= 95A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
25
50
75
100
125
150
TC, Case Temperature (°C)
V
GS
(TH)
,T
h
resho
ld
V
o
lt
age
(N
or
m
ali
ze
d)
Maximum Safe Operating Area
10 ms
1 ms
100 s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cur
ren
t
(A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
1000000
0
1020
30
4050
VDS, Drain to Source Voltage (V)
C,
Cap
aci
tan
ce
(p
F)
Capacitance vs Drain to Source Voltage
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
0
40 80 120 160 200 240 280 320
Gate Charge (nC)
V
GS
,Ga
te
to
So
u
rce
Vo
lt
ag
e(
V
)
Gate Charge vs Gate to Source Voltage
ID=95A
TJ=25°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
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