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參數資料
| 型號： | APTC60DDAM70T3 |
| 元件分類： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 337K |
| 代理商： | APTC60DDAM70T3 |
APTC60DDAM70T3
AP
T
C
60
DDAM
70
T
3–
R
ev
0
S
ep
te
m
be
r,
2004
APT website – http://www.advancedpower.com
1 - 6
14
13
Q1
Q2
23
8
22
7
CR1
CR2
30
29
32
4
26
3
27
31
16
15
R1
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
39
ID
Continuous Drain Current
Tc = 80°C
29
IDM
Pulsed Drain current
120
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
70
m
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
VDSS = 600V
RDSon = 70m max @ Tj = 25°C
ID = 39A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
Dual boost chopper
Super Junction MOSFET
Power Module
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| APTC60DDAM70T3 | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APTC60DDAM70T3G | 功能描述:MOSFET MOD BOOST CHOPPER SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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| APTC60DHM35T3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical bridge Super Junction MOSFET Power Module |
| APTC60DHM45T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical bridge Super Junction MOSFET Power Module |
| APTC60DSKM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP3 制造商:Microsemi Corporation 功能描述:600V 24mOhm Super Junction MOSFET Power Module |
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