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參數資料
| 型號： | APTC60HM35T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 337K |
| 代理商： | APTC60HM35T3 |
APTC60HM35T3
A
P
T
C
60
H
M
35T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
1 - 6
11
Q4
14
13
23
Q2
10
8
7
3
4
22
29
31
R1
15
16
32
26
19
18
Q1
Q3
27
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
72
ID
Continuous Drain Current
Tc = 80°C
54
IDM
Pulsed Drain current
200
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
35
m
PD
Maximum Power Dissipation
Tc = 25°C
416
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
VDSS = 600V
RDSon = 35m max @ Tj = 25°C
ID = 72A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
Super Junction MOSFET
Power Module
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相關代理商/技術參數 |
參數描述 |
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| APTC60HM70RT3G | 功能描述:POWER MODULE FULL BRIDGE SP3F RoHS:是 類別:半導體模塊 >> FET 系列:CoolMOS™ 標準包裝:10 系列:* |
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