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參數資料
| 型號： | APTC80H29SCT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 800 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 6/7頁 |
| 文件大小： | 319K |
| 代理商： | APTC80H29SCT |
APTC80H29SCT
A
PT
C
80H
29S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 7
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
5
10152025
ID, Drain Current (A)
td
(o
n
)a
n
d
td
(o
ff)
(n
s
)
VDS=533V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
5
1015
2025
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=533V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
100
200
300
400
500
5
10
152025
ID, Drain Current (A)
E
o
n
a
n
d
E
o
ff
(J
)
VDS=533V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
250
500
750
1000
1250
0
1020
304050
Gate Resistance (Ohms)
Sw
it
c
h
in
g
En
e
rg
y
(
J)
Switching Energy vs Gate Resistance
VDS=533V
ID=15A
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
4
6
8
10
12
14
ID, Drain Current (A)
F
req
u
e
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=533V
D=50%
RG=5
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2
0.611.4
1.8
VSD, Source to Drain Voltage (V)
I DR
,R
everse
Drain
Cu
rrent
(A
)
Source to Drain Diode Forward Voltage
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APTC80H29SCTG | 功能描述:MOSFET PWR MOD FULL BRIDGE SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTC80H29T1G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTC80H29T3 | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTC80H29T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTC80SK15T1G | 功能描述:MOSFET N-CH 800V 28A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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