- 您現(xiàn)在的位置：買賣IC網 > PDF目錄57949 > APTC90DSK12CT1G (MICROSEMI POWER PRODUCTS GROUP) 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTC90DSK12CT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 221K |
| 代理商： | APTC90DSK12CT1G |
APTC90DSK12CT1G
APT
C
90DSK12CT
1G
–
Rev
0
Septem
ber
,2009
www.microsemi.com
1 – 6
Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
900
V
Tc = 25°C
30
ID
Continuous Drain Current
Tc = 80°C
23
IDM
Pulsed Drain current
75
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
120
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
8.8
A
EAR
Repetitive Avalanche Energy
2.9
EAS
Single Pulse Avalanche Energy
1940
mJ
VDSS = 900V
RDSon = 120mΩ max @ Tj = 25°C
ID = 30A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Dual buck chopper
Super Junction MOSFET
SiC chopper diode
相關PDF資料 |
PDF描述 |
|---|---|
| APTC90DSK12T1G | 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90H12T1G | 30 A, 900 V, 0.12 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90SKM60CT1G | 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC90SKM60T1G | 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC90TDUM60TPG | 59 A, 900 V, 0.06 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTC90DSK12T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC90H12SCTG | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC90H12T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTC90H12T2G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC90HM60T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。