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參數(shù)資料
型號(hào): APTGF10X120P2
廠(chǎng)商: Advanced Power Technology Ltd.
英文描述: 3 Phase bridge NPT IGBT Power Module
中文描述: 3相橋不擴(kuò)散核武器條約IGBT功率模塊
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 191K
代理商: APTGF10X120P2
APTGF10X120E2
APTGF10X120P2
A
APT website – http://www.advancedpower.com
1 - 4
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
15
10
30
±20
80
100A@1200V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
SCSOA
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short Circuit Safe Operating Area
A
V
W
Pin out: APTGF10X120E2
(Long pins)
V
W
P+
11 12
9 10
7 8
U
N-
1 2 3 4 5 6
Pin out: APTGF10X120P2
(Short pins)
N-
P+
W
V
U
12
10
9
11
8
2
1
4
6
7
5
3
V
CES
= 1200V
I
C
= 10A @ Tc = 80°C
Application
Features
AC Motor control
Non Punch Through (NPT) IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF10X120P2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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