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參數資料
型號: APTGF125X60E3
廠商: Advanced Power Technology Ltd.
英文描述: 3 Phase bridge NPT IGBT Power Module
中文描述: 3相橋不擴散核武器條約IGBT功率模塊
文件頁數: 1/3頁
文件大小: 179K
代理商: APTGF125X60E3
APTGF125X60E3
A
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
600
180
125
350
±20
570
300A@480V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
13
14
17
19
15
8
9
11
10
12
21
20
5 6
3 4
1 2
7
V
CES
= 600V
I
C
= 125A @ Tc = 80°C
Application
Features
AC Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
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相關代理商/技術參數
參數描述
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APTGF125X60TE3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF125X60TE3G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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