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參數資料
| 型號： | APTGF150SK120T |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Buck chopper NPT IGBT Power Module |
| 中文描述： | 降壓斬波器不擴散核武器條約IGBT功率模塊 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 285K |
| 代理商： | APTGF150SK120T |
APTGF150SK120T
A
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
200
150
300
±20
961
300A @ 1200V
Unit
V
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
T
c
= 25°C
T
j
= 150°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
0/VBUS
NTC1
OUT
Q1
VBUS
NTC2
0/VBUS SENSE
G1
E1
NTC2
OUT
OUT
E1
NTC1
VBUS
0/VBUS
SENSE
0/VBUS
SENSE
0/VBUS
G1
V
CES
= 1200V
I
C
= 150A @ Tc = 80°C
Application
Features
AC and DC motor control
Switched Mode Power Supplies
Non Punch Through (NPT) FAST IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
Buck chopper
NPT IGBT Power Module
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| APTGF15H120T3 | Full - Bridge NPT IGBT Power Module |
| APTGF15X120E2 | 3 Phase bridge NPT IGBT Power Module |
| APTGF15X120P2 | 3 Phase bridge NPT IGBT Power Module |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGF150SK120TG | 功能描述:IGBT 1200V 200A 961W SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF150X60E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF150X60E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF150X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15A120T1G | 功能描述:IGBT MODULE NPT PHASE 1200V SP1 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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