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參數(shù)資料
| 型號(hào)： | APTGF150X60E3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴(kuò)散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 179K |
| 代理商： | APTGF150X60E3 |
APTGF150X60E3
A
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
600
225
150
450
±20
700
400A@480V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
13
14
17
19
15
8
9
11
10
12
21
20
5 6
3 4
1 2
7
V
CES
= 600V
I
C
= 150A @ Tc = 80°C
Application
Features
AC Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGF150X60TE3G | 3 Phase bridge NPT IGBT Power Module |
| APTGF15H120T3 | Full - Bridge NPT IGBT Power Module |
| APTGF15X120E2 | 3 Phase bridge NPT IGBT Power Module |
| APTGF15X120P2 | 3 Phase bridge NPT IGBT Power Module |
| APTGF15X60BTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF150X60E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF150X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15A120T1G | 功能描述:IGBT MODULE NPT PHASE 1200V SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF15H120T1G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF15H120T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge NPT IGBT Power Module |
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