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參數(shù)資料
| 型號： | APTGF50A120T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-12 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 294K |
| 代理商： | APTGF50A120T |
APTGF50A120T
A
PT
G
F50A
120T
–
R
ev
1
M
ar
ch,
2004
APT website – http://www.advancedpower.com
2- 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500 A
1200
V
Tj = 25°C
500
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
2500
A
Tj = 25°C
3.2
3.7
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 50A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20 V, VCE = 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3450
Coes
Output Capacitance
330
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
220
pF
Qg
Total gate Charge
330
Qge
Gate – Emitter Charge
35
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 600V
IC = 50A
200
nC
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
65
Td(off)
Turn-off Delay Time
320
Tf
Fall Time
30
ns
Eon
Turn-on Switching Energy
u
5.4
Eoff
Turn-off Switching Energy
v
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 50A
RG = 5
W
2.3
mJ
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
65
Td(off)
Turn-off Delay Time
360
Tf
Fall Time
40
ns
Eon
Turn-on Switching Energy
u
6.9
Eoff
Turn-off Switching Energy
v
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 50A
RG = 5
W
3.05
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
60
A
IF = 60A
2.0
2.5
IF = 120A
2.3
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.8
V
Tj = 25°C
370
trr
Reverse Recovery Time
IF = 60A
VR = 800V
di/dt =400A/s
Tj = 125°C
500
ns
Tj = 25°C
1320
Qrr
Reverse Recovery Charge
IF = 60A
VR = 800V
di/dt =400A/s
Tj = 125°C
6900
nC
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
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| APTGF50A120T1G | 功能描述:IGBT MODULE NPT PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF50A120T3WG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Phase leg NPT IGBT Power Module |
| APTGF50A120TG | 功能描述:IGBT MODULE NPT PHASE LEG SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF50A60T1G | 功能描述:IGBT MODULE NPT PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF50DA120CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
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