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參數資料
| 型號： | APTGF50DH60T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 0K |
| 代理商： | APTGF50DH60T1G |
APTGF50DH60T1G
APT
G
F50DH60T1G
–
Rev
0
April,
2009
www.microsemi.com
1 – 7
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
65*
IC
Continuous Collector Current
TC = 80°C
50*
ICM
Pulsed Collector Current
TC = 25°C
230
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
250
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
100A @ 500V
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater
than 35°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Asymmetrical - Bridge
NPT IGBT Power Module
VCES = 600V
IC = 50A* @ Tc = 80°C
相關PDF資料 |
PDF描述 |
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| APTGF50DH60T | 65 A, 600 V, N-CHANNEL IGBT |
| APTGF50DH60T | 65 A, 600 V, N-CHANNEL IGBT |
| APTGF50DU120T | 75 A, 1200 V, N-CHANNEL IGBT |
| APTGF50DU120T | 75 A, 1200 V, N-CHANNEL IGBT |
| APTGF50H120TG | 75 A, 1200 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGF50DH60TG | 功能描述:IGBT MODULE NPT ASYM BRIDGE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF50DSK120T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT NPT 1200V 70A SP3 |
| APTGF50DSK60T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual Buck chopper NPT IGBT Power Module |
| APTGF50DSK60T3G | 功能描述:IGBT MODULE NPT BUCK CHOP SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF50DU120T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source NPT IGBT Power Module |
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