- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366577 > APTGF50H60T3G (Advanced Power Technology Ltd.) Full - Bridge NPT IGBT Power Module PDF資料下載
參數(shù)資料
| 型號(hào)： | APTGF50H60T3G |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge NPT IGBT Power Module |
| 中文描述： | 全-橋不擴(kuò)散核武器條約IGBT功率模塊 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 328K |
| 代理商： | APTGF50H60T3G |
APTGF50H60T3G
A
APT website – http://www.advancedpower.com
1 - 6
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
600
65
50
230
±20
250
100A @ 500V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
A
V
W
Q3
11
10
Q1
CR1
7
22
13
14
CR3
3
30
29
32
18
19
23
8
15
31
R1
16
4
CR4
CR2
Q2
Q4
26
27
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
V
CES
= 600V
I
C
= 50A @ Tc = 80°C
Application
Features
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
-
Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive T
C
of V
CEsat
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
Full - Bridge
NPT IGBT Power Module
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGF50TA120P | Triple phase leg NPT IGBT Power Module |
| APTGF50TDU120P | Triple dual Common Source NPT IGBT Power Module |
| APTGF50X120E2 | 3 Phase bridge NPT IGBT Power Module |
| APTGF50X120P2 | 3 Phase bridge NPT IGBT Power Module |
| APTGF50X120TE3 | 3 Phase bridge NPT IGBT Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF50SK120T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper NPT IGBT Power Module |
| APTGF50SK120T1G | 功能描述:IGBT 1200V 75A 312W SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF50SK120TG | 功能描述:IGBT 1200V 75A 312W SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF50TA120P | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Triple phase leg NPT IGBT Power Module |
| APTGF50TA120PG | 功能描述:IGBT MODULE NPT TRPL PHASE SP6P RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。