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參數資料
| 型號： | APTGF50SK120T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-12 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 299K |
| 代理商： | APTGF50SK120T |
APTGF50SK120T
A
PT
G
F50S
K
120T
–
R
ev
1
M
ar
ch,
2004
APT website – http://www.advancedpower.com
1- 6
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Non Punch Through (NPT) FAST IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
0/VBUS
NTC1
OUT
Q1
VBUS
NTC2
0/VBU S SENSE
G1
E1
NTC2
OUT
E1
NTC1
VBUS
0/VBUS
SENSE
0/VBUS
SENSE
0/VBUS
G1
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
75
IC
Continuous Collector Current
Tc = 80°C
50
ICM
Pulsed Collector Current
Tc = 25°C
150
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
312
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
150A @ 1200V
VCES = 1200V
IC = 50A @ Tc = 80°C
Buck chopper
NPT IGBT Power Module
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PDF描述 |
|---|---|
| APTGF50SK120T | 75 A, 1200 V, N-CHANNEL IGBT |
| APTGF50TL60T3G | 65 A, 600 V, N-CHANNEL IGBT |
| APTGF50VDA60T3G | 65 A, 600 V, N-CHANNEL IGBT |
| APTGF50X120E3 | 78 A, 1200 V, N-CHANNEL IGBT |
| APTGF50X120E3G | 78 A, 1200 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGF50SK120T1G | 功能描述:IGBT 1200V 75A 312W SP1 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF50SK120TG | 功能描述:IGBT 1200V 75A 312W SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF50TA120P | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Triple phase leg NPT IGBT Power Module |
| APTGF50TA120PG | 功能描述:IGBT MODULE NPT TRPL PHASE SP6P RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF50TDU120P | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Triple dual Common Source NPT IGBT Power Module |
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