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參數(shù)資料
| 型號(hào)： | APTGF90TDU60P |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Triple dual Common Source NPT IGBT Power Module |
| 中文描述： | 三雙共源不擴(kuò)散核武器條約IGBT功率模塊 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 330K |
| 代理商： | APTGF90TDU60P |
APTGF90TDU60P
A
APT website – http://www.advancedpower.com
1 - 6
Application
Features
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Non Punch Through (NPT) THUNDERBOLT IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
E5/E6
G5
E5
E3/E4
C5
G3
C6
E6
G6
C2
E2
G2
C4
E4
G4
E1
C1
G1
E1/E2
C3
E3
E5
G5
C 5
C 3
G3
E5/E6
E3
E6
G6
C 4
C 6
E4
G4
E1
E1/E2
E3/E4
C 1
G1
G2
E2
C 2
Parameter
Max ratings
600
110
90
315
±20
416
315A @ 600V
Unit
V
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
T
c
= 25°C
T
j
= 150°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
A
V
W
V
CES
= 600V
I
C
= 90A @ Tc = 80°C
Triple dual Common Source
NPT IGBT Power Module
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF90TDU60PG | 功能描述:IGBT MODULE NPT TRPLE DUAL SP6P RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF90VDA60T3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Dual Boost chopper NPT IGBT Power Module |
| APTGF90X60E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF90X60E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF90X60TE3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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