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參數(shù)資料
| 型號： | APTGL475U120D4G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 封裝： | ROHS COMPLIANT, D4, 5 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 197K |
| 代理商： | APTGL475U120D4G |
APTGL475U120D4G
APT
G
L
475U120D
4G
–
Rev
0
July,
2008
www.microsemi.com
1- 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
610
IC
Continuous Collector Current
TC = 80°C
475
ICM
Pulsed Collector Current
TC = 25°C
1200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
2082
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
800A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
3
5
2
1
VCES = 1200V
IC = 475A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT 4 Technology
-
Low voltage drop
-
Low leakage current
-
Low switching losses
-
Soft recovery parallel diodes
-
Low diode VF
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Single switch
Trench + Field Stop IGBT4
Power Module
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGL475U120DAG | 功能描述:POWER MOD IGBT4 SER DIODE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGL60A120T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Phase leg Trench + Field Stop IGBT4 Power module |
| APTGL60DDA120T3G | 功能描述:IGBT4 MODULE TRENCH 1200V SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGL60DH120T3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT4 Power module |
| APTGL60DSK120T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 80A SP3 |
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