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參數資料
| 型號： | APTGS75X170E3 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | MODULE-33 |
| 文件頁數： | 2/3頁 |
| 文件大?。?/td> | 210K |
| 代理商： | APTGS75X170E3 |
APTGS75X170E3
A
PT
G
S7
5X
17
0E
3
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
1700
V
Tj = 25°C
0.03
0.15
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1700V
Tj = 125°C
2
mA
Tj = 25°C
2.7
3.3
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 75A
Tj = 125°C
3.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 3.5 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
5000
pF
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
800
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 75A
RG = 20
30
ns
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
900
Tf
Fall Time
30
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 75A
RG = 20
22
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
2.2
2.6
VF
Diode Forward Voltage
IF = 75A
VGE = 0V
Tj = 125°C
2.0
V
Tj = 25°C
3.5
Er
Reverse Recovery Energy
IF = 75A
VR = 900V
di/dt =900A/s Tj = 125°C
6.5
mJ
Tj = 25°C
9
Qrr
Reverse Recovery Charge
IF = 75A
VR = 900V
di/dt =900A/s Tj = 125°C
19
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.2
RthJC
Junction to Case
Diode
0.47
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3
4.5
N.m
Wt
Package Weight
300
g
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相關代理商/技術參數 |
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| APTGS75X170E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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| APTGT100A1202G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
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| APTGT100A120D1G | 功能描述:IGBT MODULE TRENCH PHASE LEG D1 RoHS:是 類別:半導體模塊 >> IGBT 系列:Trench + Field Stop IGBT® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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