欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: APTGS75X170E3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 150 A, 1700 V, N-CHANNEL IGBT
封裝: MODULE-33
文件頁數(shù): 2/3頁
文件大小: 210K
代理商: APTGS75X170E3G
APTGS75X170E3
A
PT
G
S7
5X
17
0E
3
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
1700
V
Tj = 25°C
0.03
0.15
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1700V
Tj = 125°C
2
mA
Tj = 25°C
2.7
3.3
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 75A
Tj = 125°C
3.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 3.5 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
5000
pF
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
800
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 75A
RG = 20
30
ns
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
900
Tf
Fall Time
30
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 75A
RG = 20
22
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
2.2
2.6
VF
Diode Forward Voltage
IF = 75A
VGE = 0V
Tj = 125°C
2.0
V
Tj = 25°C
3.5
Er
Reverse Recovery Energy
IF = 75A
VR = 900V
di/dt =900A/s Tj = 125°C
6.5
mJ
Tj = 25°C
9
Qrr
Reverse Recovery Charge
IF = 75A
VR = 900V
di/dt =900A/s Tj = 125°C
19
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.2
RthJC
Junction to Case
Diode
0.47
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3
4.5
N.m
Wt
Package Weight
300
g
相關(guān)PDF資料
PDF描述
APTGS75X170E3 150 A, 1700 V, N-CHANNEL IGBT
APTGS75X170E3 150 A, 1700 V, N-CHANNEL IGBT
APTGT100A170T 150 A, 1700 V, N-CHANNEL IGBT
APTGT100A170T 150 A, 1700 V, N-CHANNEL IGBT
APTGT100DA170T 150 A, 1700 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGS75X170TE3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGT100A1202G 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk
APTGT100A120D1 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module
APTGT100A120D1G 功能描述:IGBT MODULE TRENCH PHASE LEG D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:Trench + Field Stop IGBT® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT100A120T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module
主站蜘蛛池模板: 凌云县| 长泰县| 荆门市| 贞丰县| 阿克苏市| 卢湾区| 东台市| 湘阴县| 鄂州市| 绿春县| 洛阳市| 陕西省| 佛山市| 乌海市| 西华县| 佳木斯市| 海口市| 桐城市| 湘潭县| 北川| 德州市| 新平| 太仓市| 兰考县| 大新县| 东源县| 聂荣县| 横山县| 澳门| 景宁| 大余县| 洪湖市| 绵阳市| 慈利县| 凤台县| 滦平县| 台江县| 万载县| 北辰区| 隆子县| 宜昌市|