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參數(shù)資料
| 型號(hào)： | APTGT150DA120D3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Boost Chopper Trench IGBT Power Module |
| 中文描述： | 升壓斬波溝道IGBT功率模塊 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 170K |
| 代理商： | APTGT150DA120D3 |
APTGT150DA120D3
A
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
220
150
350
±20
695
600A@900V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
SCSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short Circuit Safe Operating Area
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1
2
3
Q2
6
7
2
3
5
4
6
7
1
V
CES
= 1200V
I
C
= 150A @ Tc = 80°C
Application
Features
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M6 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Boost Chopper
Trench IGBT
Power Module
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGT150DA170D1 | Boost chopper Trench IGBT Power Module |
| APTGT150DA170D3 | Boost chopper Trench IGBT Power Module |
| APTGT150DA170 | Boost chopper Trench + Field Stop IGBT Power Module |
| APTGT150DH120 | Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module |
| APTGT150DU60T | Dual common source Trench + Field Stop IGBT Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT150DA120DX | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150DA120G | 功能描述:IGBT 1200V 220A 690W SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT150DA120TG | 功能描述:IGBT 1200V 200A 690W SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT150DA12DX | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT150DA170 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost chopper Trench + Field Stop IGBT Power Module |
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