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參數(shù)資料
| 型號： | APTGT50DA170T |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Boost chopper Trench + Field Stop IGBT Power Module |
| 中文描述： | 升壓斬波器溝槽場站IGBT功率模塊 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 287K |
| 代理商： | APTGT50DA170T |
APTGT50DA170T
A
APT website – http://www.advancedpower.com
1 - 5
Application
Features
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1700
75
50
100
±20
312
100A @ 1600V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
CR1
VBUS SENSE
NTC2
Q2
G2
NTC1
OUT
VBUS
E2
0/VBUS
VBUS
OUT
OUT
NTC2
NTC1
0/VBUS
E2
E2
G2
G2
VBUS
SENSE
V
CES
= 1700V
I
C
= 50A @ Tc = 80°C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Boost chopper
Trench + Field Stop IGBT
Power Module
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| APTGT50DDA60T3 | Dual Boost chopper Trench + Field Stop IGBT Power Module |
| APTGT50DH120T | Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module |
| APTGT50DH170T | Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT50DA170T1G | 功能描述:IGBT 1700V 75A 312W SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT50DA170TG | 功能描述:IGBT 1700V 75A 312W SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT50DDA120T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual Boost chopper Trench IGBT Power Module |
| APTGT50DDA120T3G | 功能描述:POWER MOD IGBT TRENCH BOOST SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT50DDA60T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual Boost chopper Trench + Field Stop IGBT Power Module |
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